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Infineon N-Channel MOSFET, 106 A, 40 V, 7-Pin DirectFET MX IRF6616TRPBF

GBP 1.74

1

Infineon N-Channel MOSFET, 160 A, 25 V, 7-Pin DirectFET MX IRF6795MTRPBF

GBP 1.57

1

Infineon N-Channel MOSFET, 106 A, 40 V, 7-Pin DirectFET MX IRF6616TRPBF

Infineon N-Channel MOSFET, 106 A, 40 V, 7-Pin DirectFET MX IRF6616TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.005 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.25V, Series: HEXFET

GBP 1.19

1

Infineon N-Channel MOSFET, 106 A, 40 V, 7-Pin DirectFET MX IRF6616TRPBF

Infineon N-Channel MOSFET, 106 A, 40 V, 7-Pin DirectFET MX IRF6616TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.005 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.25V, Series: HEXFET

GBP 1.90

1

Infineon N-Channel MOSFET, 160 A, 25 V, 7-Pin DirectFET MX IRF6795MTRPBF

Infineon N-Channel MOSFET, 160 A, 25 V, 7-Pin DirectFET MX IRF6795MTRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0032 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.35V, Series: HEXFET

GBP 1.08

1

Infineon N-Channel MOSFET, 160 A, 25 V, 7-Pin DirectFET MX IRF6795MTRPBF

Infineon N-Channel MOSFET, 160 A, 25 V, 7-Pin DirectFET MX IRF6795MTRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0032 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.35V, Series: HEXFET

GBP 1.72

1

Infineon N-Channel MOSFET, 198 A, 40 V, 3 + Tab-Pin MX IRF7946TRPBF

Infineon N-Channel MOSFET, 198 A, 40 V, 3 + Tab-Pin MX IRF7946TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 96 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 0.53mm

GBP 0.61

1

Infineon N-Channel MOSFET, 198 A, 40 V, 3 + Tab-Pin MX IRF7946TRPBF

Infineon N-Channel MOSFET, 198 A, 40 V, 3 + Tab-Pin MX IRF7946TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 96 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 0.53mm

GBP 0.61

1

Infineon N-Channel MOSFET, 198 A, 40 V, 3 + Tab-Pin MX IRF7946TRPBF

Infineon N-Channel MOSFET, 198 A, 40 V, 3 + Tab-Pin MX IRF7946TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 96 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 0.53mm

GBP 0.60

1

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Infineon N-Channel MOSFET, 106 A, 40 V, 7-Pin DirectFET MX IRF6616TRPBF

Infineon N-Channel MOSFET, 160 A, 25 V, 7-Pin DirectFET MX IRF6795MTRPBF

Infineon N-Channel MOSFET, 106 A, 40 V, 7-Pin DirectFET MX IRF6616TRPBF

Infineon N-Channel MOSFET, 106 A, 40 V, 7-Pin DirectFET MX IRF6616TRPBF

Infineon N-Channel MOSFET, 160 A, 25 V, 7-Pin DirectFET MX IRF6795MTRPBF

Infineon N-Channel MOSFET, 160 A, 25 V, 7-Pin DirectFET MX IRF6795MTRPBF

Infineon N-Channel MOSFET, 198 A, 40 V, 3 + Tab-Pin MX IRF7946TRPBF

Infineon N-Channel MOSFET, 198 A, 40 V, 3 + Tab-Pin MX IRF7946TRPBF

Infineon N-Channel MOSFET, 198 A, 40 V, 3 + Tab-Pin MX IRF7946TRPBF

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