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STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches, Tension Emetteur Base maximum: 20 V, Configuration du transistor: Simple, Gain en courant DC minimum: 230 @ 20 mA @ 10 V, Tension de saturation Base Emetteur maximum: 2 V, Tension Collecteur Base maximum: 2000 V, Courant de coupure Collecteur maximum: 100µA, Dimensions: 10.4 x 4.6 x 15.75mm, MPN: STP03D200

EUR 8.04

1

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches, Tension Emetteur Base maximum: 20 V, Configuration du transistor: Simple, Gain en courant DC minimum: 230 @ 20 mA @ 10 V, Tension de saturation Base Emetteur maximum: 2 V, Tension Collecteur Base maximum: 2000 V, Courant de coupure Collecteur maximum: 100µA, Dimensions: 10.4 x 4.6 x 15.75mm, MPN: STP03D200

EUR 6.94

1

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches, Tension Emetteur Base maximum: 20 V, Configuration du transistor: Simple, Gain en courant DC minimum: 230 @ 20 mA @ 10 V, Tension de saturation Base Emetteur maximum: 2 V, Tension Collecteur Base maximum: 2000 V, Courant de coupure Collecteur maximum: 100µA, Dimensions: 10.4 x 4.6 x 15.75mm, MPN: STP03D200

EUR 6.77

1

STMicroelectronics Transistor Darlington NPN, TO-220, 3 Pin, 100 mA, 1200 V, Montaggio su foro

STMicroelectronics Transistor Darlington NPN, TO-220, 3 Pin, 100 mA, 1200 V, Montaggio su foro, Tensione massima base emitter: 20 V, Configurazione transistor: Singolo, Guadagno minimo corrente c.c.: 230 @ 20 mA @ 10 V, Tensione massima di saturazione emitter: 2 V, Tensione massima base del collettore: 2000 V, Corrente massima di cut-off del collettore: 100µA, Dimensioni: 10.4 x 4.6 x 15.75mm, MPN: STP03D200

EUR 8.04

1

STMicroelectronics Transistor Darlington NPN, TO-220, 3 Pin, 100 mA, 1200 V, Montaggio su foro

STMicroelectronics Transistor Darlington NPN, TO-220, 3 Pin, 100 mA, 1200 V, Montaggio su foro, Tensione massima base emitter: 20 V, Configurazione transistor: Singolo, Guadagno minimo corrente c.c.: 230 @ 20 mA @ 10 V, Tensione massima di saturazione emitter: 2 V, Tensione massima base del collettore: 2000 V, Corrente massima di cut-off del collettore: 100µA, Dimensioni: 10.4 x 4.6 x 15.75mm, MPN: STP03D200

EUR 6.94

1

STMicroelectronics Transistor Darlington NPN, TO-220, 3 Pin, 100 mA, 1200 V, Montaggio su foro

STMicroelectronics Transistor Darlington NPN, TO-220, 3 Pin, 100 mA, 1200 V, Montaggio su foro, Tensione massima base emitter: 20 V, Configurazione transistor: Singolo, Guadagno minimo corrente c.c.: 230 @ 20 mA @ 10 V, Tensione massima di saturazione emitter: 2 V, Tensione massima base del collettore: 2000 V, Corrente massima di cut-off del collettore: 100µA, Dimensioni: 10.4 x 4.6 x 15.75mm, MPN: STP03D200

EUR 6.77

1

STMicroelectronics IGBT, VCE 1200 V, IC 150 A, Max247

STMicroelectronics IGBT, VCE 1200 V, IC 150 A, Max247, MPN: STGYA75H120DF2

EUR 9.73

1

STMicroelectronics IGBT, STGYA75H120DF2, 150 A, 1200 V, Max247, 3-Pines

STMicroelectronics IGBT, 150 A, 1200 V, Max247, 3-Pines, MPN: STGYA75H120DF2

EUR 9.73

1

STMicroelectronics Module MOSFET canal N,, Hip247 12 A 1200 V, 3 broches

STMicroelectronics Module MOSFET canal N,, Hip247 12 A 1200 V, 3 broches, MPN: SCT10N120

EUR 10.00

1

STMicroelectronics IGBT, VCE 1200 V, IC 150 A, Max247

STMicroelectronics IGBT, VCE 1200 V, IC 150 A, Max247, Tensione massima gate emitter: ±20V, Dissipazione di potenza massima: 750 W, Tipo di montaggio: Su foro, Numero pin: 3, MPN: STGYA75H120DF2

EUR 8.25

1

STMicroelectronics IGBT, VCE 1200 V, IC 150 A, Max247

STMicroelectronics IGBT, VCE 1200 V, IC 150 A, Max247, Tensione massima gate emitter: ±20V, Dissipazione di potenza massima: 750 W, Tipo di montaggio: Su foro, Numero pin: 3, MPN: STGYA75H120DF2

EUR 9.93

1

STMicroelectronics IGBT, STGYA75H120DF2, 150 A, 1200 V, Max247, 3-Pines

STMicroelectronics IGBT, 150 A, 1200 V, Max247, 3-Pines, Tensión Máxima Puerta-Emisor: ±20V, Disipación de Potencia Máxima: 750 W, Tipo de Montaje: Montaje en orificio pasante, MPN: STGYA75H120DF2

EUR 8.25

1

STMicroelectronics IGBT, STGYA75H120DF2, 150 A, 1200 V, Max247, 3-Pines

STMicroelectronics IGBT, 150 A, 1200 V, Max247, 3-Pines, Tensión Máxima Puerta-Emisor: ±20V, Disipación de Potencia Máxima: 750 W, Tipo de Montaje: Montaje en orificio pasante, MPN: STGYA75H120DF2

EUR 9.93

1

STMicroelectronics Module d'alimentation en carbure de silicium canal N,, Hip247 12 A 1200 V, 3 broches

STMicroelectronics Module d'alimentation en carbure de silicium canal N,, Hip247 12 A 1200 V, 3 broches, MPN: SCT10N120H

EUR 8.46

1

STMicroelectronics MOSFET canal N,, H2PAK-2 12 A 1200 V, 3 broches

STMicroelectronics MOSFET canal N,, H2PAK-2 12 A 1200 V, 3 broches, Type de montage: CMS, Résistance Drain Source maximum: 0,69 Ω, Mode de canal: Enrichissement, Tension de seuil maximale de la grille: 4.9V, Matériau du transistor: SiC, Série: STB37N60, MPN: STH12N120K5-2

EUR 8.76

1

STMicroelectronics IGBT, STGWA40S120DF3,, 80 A, 1200 V, A-247, 3 broches, Simple

STMicroelectronics IGBT,, 80 A, 1200 V, A-247, 3 broches, Simple, Tension Grille Emetteur maximum: ±20V, Dissipation de puissance maximum: 468 W, Type de montage: Traversant, Longueur: 15.9mm, Largeur: 5.1mm, Hauteur: 21.1mm, Dimensions: 15.9 x 5.1 x 21.1mm, Indice énergétique: 8.5mJ, Capacité de grille: 2475pF, MPN: STGWA40S120DF3

EUR 7.02

1

STMicroelectronics IGBT, STGWA40S120DF3,, 80 A, 1200 V, A-247, 3 broches, Simple

STMicroelectronics IGBT,, 80 A, 1200 V, A-247, 3 broches, Simple, Tension Grille Emetteur maximum: ±20V, Dissipation de puissance maximum: 468 W, Type de montage: Traversant, Dimensions: 15.9 x 5.1 x 21.1mm, Indice énergétique: 8.5mJ, Capacité de grille: 2475pF, Température d'utilisation maximum: +175 °C, Température de fonctionnement minimum: -55 °C, MPN: STGWA40S120DF3

EUR 7.02

1

STMicroelectronics IGBT, STGWA40S120DF3,, 80 A, 1200 V, A-247, 3 broches, Simple

STMicroelectronics IGBT,, 80 A, 1200 V, A-247, 3 broches, Simple, Tension Grille Emetteur maximum: ±20V, Dissipation de puissance maximum: 468 W, Type de montage: Traversant, Dimensions: 15.9 x 5.1 x 21.1mm, Indice énergétique: 8.5mJ, Capacité de grille: 2475pF, Température d'utilisation maximum: +175 °C, Température de fonctionnement minimum: -55 °C, MPN: STGWA40S120DF3

EUR 6.17

1

STMicroelectronics Module d'alimentation en carbure de silicium canal N,, Hip247 12 A 1200 V, 3 broches

STMicroelectronics Module d'alimentation en carbure de silicium canal N,, Hip247 12 A 1200 V, 3 broches, Résistance Drain Source maximum: 0,52 Ω, Mode de canal: Enrichissement, Tension de seuil maximale de la grille: 3.5V, Matériau du transistor: SiC, Série: SCT10N120H

EUR 6.54

1

STMicroelectronics Module d'alimentation en carbure de silicium canal N,, Hip247 12 A 1200 V, 3 broches

STMicroelectronics Module d'alimentation en carbure de silicium canal N,, Hip247 12 A 1200 V, 3 broches, Résistance Drain Source maximum: 0,52 Ω, Mode de canal: Enrichissement, Tension de seuil maximale de la grille: 3.5V, Matériau du transistor: SiC, Série: SCT10N120H

EUR 9.82

1

STMicroelectronics Module d'alimentation en carbure de silicium canal N,, Hip247 12 A 1200 V, 3 broches

STMicroelectronics Module d'alimentation en carbure de silicium canal N,, Hip247 12 A 1200 V, 3 broches, Résistance Drain Source maximum: 0,55 Ω, Mode de canal: Enrichissement, Tension de seuil maximale de la grille: 3.5V, Matériau du transistor: SiC, Série: SCTWA10N120

EUR 7.96

1

STMicroelectronics IGBT, VCE 1200 V, IC 80 A, canale N, TO-247

STMicroelectronics IGBT, VCE 1200 V, IC 80 A, canale N, TO-247, Tensione massima gate emitter: ±20V, Dissipazione di potenza massima: 468 W, Tipo di montaggio: Su foro, Numero pin: 3, Configurazione transistor: Singolo, Lunghezza: 15.9mm, Larghezza: 5.1mm, Altezza: 21.1mm, Dimensioni: 15.9 x 5.1 x 21.1mm, Classe di efficienza energetica: 8.5mJ, Capacità del gate: 2475pF, MPN: STGWA40S120DF3

EUR 7.02

1

STMicroelectronics IGBT, VCE 1200 V, IC 80 A, canale N, TO-247

STMicroelectronics IGBT, VCE 1200 V, IC 80 A, canale N, TO-247, Tensione massima gate emitter: ±20V, Dissipazione di potenza massima: 468 W, Tipo di montaggio: Su foro, Numero pin: 3, Configurazione transistor: Singolo, Dimensioni: 15.9 x 5.1 x 21.1mm, Classe di efficienza energetica: 8.5mJ, Capacità del gate: 2475pF, Massima temperatura operativa: +175 °C, Minima temperatura operativa: -55 °C, MPN: STGWA40S120DF3

EUR 6.17

1

STMicroelectronics IGBT, VCE 1200 V, IC 80 A, canale N, TO-247

STMicroelectronics IGBT, VCE 1200 V, IC 80 A, canale N, TO-247, Tensione massima gate emitter: ±20V, Dissipazione di potenza massima: 468 W, Tipo di montaggio: Su foro, Numero pin: 3, Configurazione transistor: Singolo, Dimensioni: 15.9 x 5.1 x 21.1mm, Classe di efficienza energetica: 8.5mJ, Capacità del gate: 2475pF, Massima temperatura operativa: +175 °C, Minima temperatura operativa: -55 °C, MPN: STGWA40S120DF3

EUR 7.02

1

STMicroelectronics Transistor Darlington, STP03D200, NPN 100 mA, 1.200 V, HFE:230 @ 20 mA @ 10 V, TO-220, 3 pines Simple

STMicroelectronics Transistor Darlington, NPN 100 mA, 1.200 V, HFE:230 @ 20 mA @ 10 V, TO-220, 3 pines Simple, Tensión Máxima Emisor-Base: 20 V, Tipo de Montaje: Montaje en orificio pasante, Tensión de Saturación Máxima Base-Emisor: 2 V, Tensión Base Máxima del Colector: 2.000 V, Corriente de Corte Máxima del Colector: 100µA, Dimensiones: 10.4 x 4.6 x 15.75mm, MPN: STP03D200

EUR 6.77

1

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Marchand

Prix (EUR)

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches

STMicroelectronics Transistor Darlington NPN, TO-220, 3 Pin, 100 mA, 1200 V, Montaggio su foro

STMicroelectronics Transistor Darlington NPN, TO-220, 3 Pin, 100 mA, 1200 V, Montaggio su foro

STMicroelectronics Transistor Darlington NPN, TO-220, 3 Pin, 100 mA, 1200 V, Montaggio su foro

STMicroelectronics IGBT, VCE 1200 V, IC 150 A, Max247

STMicroelectronics IGBT, STGYA75H120DF2, 150 A, 1200 V, Max247, 3-Pines

STMicroelectronics Module MOSFET canal N,, Hip247 12 A 1200 V, 3 broches

STMicroelectronics IGBT, VCE 1200 V, IC 150 A, Max247

STMicroelectronics IGBT, VCE 1200 V, IC 150 A, Max247

STMicroelectronics IGBT, STGYA75H120DF2, 150 A, 1200 V, Max247, 3-Pines

STMicroelectronics IGBT, STGYA75H120DF2, 150 A, 1200 V, Max247, 3-Pines

STMicroelectronics Module d'alimentation en carbure de silicium canal N,, Hip247 12 A 1200 V, 3 broches

STMicroelectronics MOSFET canal N,, H2PAK-2 12 A 1200 V, 3 broches

STMicroelectronics IGBT, STGWA40S120DF3,, 80 A, 1200 V, A-247, 3 broches, Simple

STMicroelectronics IGBT, STGWA40S120DF3,, 80 A, 1200 V, A-247, 3 broches, Simple

STMicroelectronics IGBT, STGWA40S120DF3,, 80 A, 1200 V, A-247, 3 broches, Simple

STMicroelectronics Module d'alimentation en carbure de silicium canal N,, Hip247 12 A 1200 V, 3 broches

STMicroelectronics Module d'alimentation en carbure de silicium canal N,, Hip247 12 A 1200 V, 3 broches

STMicroelectronics Module d'alimentation en carbure de silicium canal N,, Hip247 12 A 1200 V, 3 broches

STMicroelectronics IGBT, VCE 1200 V, IC 80 A, canale N, TO-247

STMicroelectronics IGBT, VCE 1200 V, IC 80 A, canale N, TO-247

STMicroelectronics IGBT, VCE 1200 V, IC 80 A, canale N, TO-247

STMicroelectronics Transistor Darlington, STP03D200, NPN 100 mA, 1.200 V, HFE:230 @ 20 mA @ 10 V, TO-220, 3 pines Simple

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