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STMicroelectronics Modulo MOSFET, canale N, 0,115 Ω, 25 A, TO-220FP

STMicroelectronics Modulo MOSFET, canale N, 0,115 Ω, 25 A, TO-220FP, MPN: STF33N60DM6

EUR 3.80

1

STMicroelectronics Modulo MOSFET, canale N, 0,115 Ω, 25 A, TO-220FP

STMicroelectronics Modulo MOSFET, canale N, 0,115 Ω, 25 A, TO-220FP, MPN: STP33N60DM6

EUR 3.92

1

STMicroelectronics Modulo MOSFET, canale N, 0,115 Ω, 25 A, D²PAK

STMicroelectronics Modulo MOSFET, canale N, 0,115 Ω, 25 A, D²PAK, MPN: STB33N60DM6

EUR 3.97

1

STMicroelectronics Raddrizzatore controllato silicio SCR, TO-247, 3 Pin, 25, 1200V

STMicroelectronics Raddrizzatore controllato silicio SCR, TO-247, 3 Pin, 25, 1200V, MPN: TN4050-12WL

EUR 2.77

1

STMicroelectronics MOSFET canal N,, DPAK (TO-252) 80 A 25 V, 3 broches

STMicroelectronics MOSFET canal N,, DPAK (TO-252) 80 A 25 V, 3 broches, Type de montage: CMS, Résistance Drain Source maximum: 7 mΩ, Mode de canal: Enrichissement, Tension de seuil minimale de la grille: 1V, Dissipation de puissance maximum: 70 W, Configuration du transistor: Simple, Tension Grille Source maximum: -25 V, +25 V, Hauteur: 2.4mm, Longueur: 6.6mm, MPN: STD95N2LH5

EUR 1.35

1

STMicroelectronics MOSFET, canale N, 130 mΩ, 25 A, D2PAK (TO-263), Montaggio superficiale

STMicroelectronics MOSFET, canale N, 130 mΩ, 25 A, D2PAK (TO-263), Montaggio superficiale, Tensione massima drain source: 650 V, Modalità del canale: Enhancement, Tensione di soglia gate massima: 5V, Tensione di soglia gate minima: 3V, Dissipazione di potenza massima: 190 W, Configurazione transistor: Singolo, Tensione massima gate source: -25 V, +25 V, Tensione diretta del diodo: 1.6V, MPN: STB33N60DM2

EUR 1.51

1

STMicroelectronics MOSFET canal N,, DPAK (TO-252) 80 A 25 V, 3 broches

STMicroelectronics MOSFET canal N,, DPAK (TO-252) 80 A 25 V, 3 broches, Type de montage: CMS, Résistance Drain Source maximum: 7 mΩ, Mode de canal: Enrichissement, Tension de seuil minimale de la grille: 1V, Dissipation de puissance maximum: 70 W, Configuration du transistor: Simple, Tension Grille Source maximum: -25 V, +25 V, Longueur: 6.6mm, Température d'utilisation maximum: +175 °C, MPN: STD95N2LH5

EUR 0.70

1

STMicroelectronics MOSFET, canale N, 130 mΩ, 25 A, D2PAK (TO-263), Montaggio superficiale

STMicroelectronics MOSFET, canale N, 130 mΩ, 25 A, D2PAK (TO-263), Montaggio superficiale, Tensione massima drain source: 650 V, Modalità del canale: Enhancement, Tensione di soglia gate massima: 5V, Tensione di soglia gate minima: 3V, Dissipazione di potenza massima: 190 W, Configurazione transistor: Singolo, Tensione massima gate source: -25 V, +25 V, Lunghezza: 10.4mm, Massima temperatura operativa: +150 °C, MPN: STB33N60DM2

EUR 1.47

1

STMicroelectronics MOSFET, canale N, 130 mΩ, 25 A, D2PAK (TO-263), Montaggio superficiale

STMicroelectronics MOSFET, canale N, 130 mΩ, 25 A, D2PAK (TO-263), Montaggio superficiale, Tensione massima drain source: 650 V, Modalità del canale: Enhancement, Tensione di soglia gate massima: 5V, Tensione di soglia gate minima: 3V, Dissipazione di potenza massima: 190 W, Configurazione transistor: Singolo, Tensione massima gate source: -25 V, +25 V, Lunghezza: 10.4mm, Massima temperatura operativa: +150 °C, MPN: STB33N60DM2

EUR 1.51

1

STMicroelectronics MOSFET canal N,, DPAK (TO-252) 80 A 25 V, 3 broches

STMicroelectronics MOSFET canal N,, DPAK (TO-252) 80 A 25 V, 3 broches, Type de montage: CMS, Résistance Drain Source maximum: 7 mΩ, Mode de canal: Enrichissement, Tension de seuil minimale de la grille: 1V, Dissipation de puissance maximum: 70 W, Configuration du transistor: Simple, Tension Grille Source maximum: -25 V, +25 V, Longueur: 6.6mm, Température d'utilisation maximum: +175 °C, MPN: STD95N2LH5

EUR 1.60

1

STMicroelectronics Module MOSFET canal N,, DPKZ 25 A 600 V, 3 broches

STMicroelectronics Module MOSFET canal N,, DPKZ 25 A 600 V, 3 broches, MPN: STB33N60DM6

EUR 3.97

1

STMicroelectronics MOSFET canal N,, SOT223-2 5,5 A 25 V, 3 broches

STMicroelectronics MOSFET canal N,, SOT223-2 5,5 A 25 V, 3 broches, MPN: STN6N60M2

EUR 0.66

1

STMicroelectronics MOSFET canal N,, D2PAK (TO-263) 25 A 650 V, 3 broches

STMicroelectronics MOSFET canal N,, D2PAK (TO-263) 25 A 650 V, 3 broches, Type de montage: CMS, Résistance Drain Source maximum: 130 mΩ, Mode de canal: Enrichissement, Tension de seuil maximale de la grille: 5V, Tension de seuil minimale de la grille: 3V, Dissipation de puissance maximum: 190 W, Configuration du transistor: Simple, Tension Grille Source maximum: -25 V, +25 V, Longueur: 10.4mm, Température d'utilisation maximum: +150 °C, MPN: STB33N60DM2

EUR 1.47

1

STMicroelectronics MOSFET canal N,, D2PAK (TO-263) 25 A 650 V, 3 broches

STMicroelectronics MOSFET canal N,, D2PAK (TO-263) 25 A 650 V, 3 broches, Type de montage: CMS, Résistance Drain Source maximum: 130 mΩ, Mode de canal: Enrichissement, Tension de seuil maximale de la grille: 5V, Tension de seuil minimale de la grille: 3V, Dissipation de puissance maximum: 190 W, Configuration du transistor: Simple, Tension Grille Source maximum: -25 V, +25 V, Tension directe de la diode: 1.6V, MPN: STB33N60DM2

EUR 1.51

1

STMicroelectronics MOSFET canal N,, D2PAK (TO-263) 25 A 650 V, 3 broches

STMicroelectronics MOSFET canal N,, D2PAK (TO-263) 25 A 650 V, 3 broches, Type de montage: CMS, Résistance Drain Source maximum: 130 mΩ, Mode de canal: Enrichissement, Tension de seuil maximale de la grille: 5V, Tension de seuil minimale de la grille: 3V, Dissipation de puissance maximum: 190 W, Configuration du transistor: Simple, Tension Grille Source maximum: -25 V, +25 V, Longueur: 10.4mm, Température d'utilisation maximum: +150 °C, MPN: STB33N60DM2

EUR 1.51

1

STMicroelectronics Redresseur silicium contrôlé, TN4050-12WL, 25, 50mA, 1200V, A-247, 3 broches

STMicroelectronics Redresseur silicium contrôlé, 25, 50mA, 1200V, A-247, 3 broches, MPN: TN4050-12WL

EUR 2.77

1

STMicroelectronics Module MOSFET canal N,, TO-220FP 25 A 600 V, 3 broches

STMicroelectronics Module MOSFET canal N,, TO-220FP 25 A 600 V, 3 broches, MPN: STP33N60DM6

EUR 3.92

1

STMicroelectronics Module MOSFET canal N,, TO-220FP 25 A 600 V, 3 broches

STMicroelectronics Module MOSFET canal N,, TO-220FP 25 A 600 V, 3 broches, MPN: STF33N60DM6

EUR 3.80

1

STMicroelectronics Transistor MOSFET canal N,, PowerFLAT 25 A, 5 broches

STMicroelectronics Transistor MOSFET canal N,, PowerFLAT™ 25 A, 5 broches, Type de montage: CMS, Résistance Drain Source maximum: 110 mΩ, Mode de canal: Enrichissement, Tension de seuil maximale de la grille: 4.75V, Tension de seuil minimale de la grille: 3.25V, Dissipation de puissance maximum: 160 W, Configuration du transistor: Simple, Tension Grille Source maximum: ±25 V, Longueur: 8.1mm, Température d'utilisation maximum: +150 °C, MPN: STL45N60DM6

EUR 3.82

1

STMicroelectronics Rectificador controlado de silicona SCR, 1200V, 25, 50mA, TO-247, 3-Pines

STMicroelectronics Rectificador controlado de silicona SCR, 1200V, 25, 50mA, TO-247, 3-Pines, MPN: TN4050-12WL

EUR 2.77

1

STMicroelectronics Transistor MOSFET, canale N, 110 mΩ, 25 A, PowerFLAT , Montaggio superficiale

STMicroelectronics Transistor MOSFET, canale N, 110 mΩ, 25 A, PowerFLAT™, Montaggio superficiale, Modalità del canale: Enhancement, Tensione di soglia gate massima: 4.75V, Tensione di soglia gate minima: 3.25V, Dissipazione di potenza massima: 160 W, Configurazione transistor: Singolo, Tensione massima gate source: ±25 V, Lunghezza: 8.1mm, Massima temperatura operativa: +150 °C, MPN: STL45N60DM6

EUR 3.82

1

STMicroelectronics Raddrizzatore controllato silicio SCR, TO-247, 3 Pin, 25, 1200V

STMicroelectronics Raddrizzatore controllato silicio SCR, TO-247, 3 Pin, 25, 1200V, Sovracorrente nominale: 400A, Corrente di gate trigger massima: 50mA, MPN: TN4050-12WL

EUR 3.09

1

STMicroelectronics Raddrizzatore controllato silicio SCR, TO-247, 3 Pin, 25, 1200V

STMicroelectronics Raddrizzatore controllato silicio SCR, TO-247, 3 Pin, 25, 1200V, Sovracorrente nominale: 400A, Corrente di gate trigger massima: 50mA, MPN: TN4050-12WL

EUR 2.64

1

STMicroelectronics MOSFET, canale N, 35 mΩ, 25 A, TO-220FP, Su foro

STMicroelectronics MOSFET, canale N, 35 mΩ, 25 A, TO-220FP, Su foro, Tensione massima drain source: 100 V, Modalità del canale: Enhancement, Tensione di soglia gate massima: 4.5V, Tensione di soglia gate minima: 2.5V, Dissipazione di potenza massima: 25 W, Configurazione transistor: Singolo, Tensione massima gate source: -20 V, +20 V, Altezza: 16.4mm, MPN: STF25N10F7

EUR 0.42

1

STMicroelectronics Transistor MOSFET canal N,, A-220 25 A, 3 broches

STMicroelectronics Transistor MOSFET canal N,, A-220 25 A, 3 broches, Type de montage: Traversant, Résistance Drain Source maximum: 190 μΩ, Mode de canal: Enrichissement, Tension de seuil maximale de la grille: 5V, Tension de seuil minimale de la grille: 3V, Dissipation de puissance maximum: 160 W, Configuration du transistor: Simple, Tension Grille Source maximum: ±25 V, Longueur: 10.4mm, Température d'utilisation maximum: +150 °C, MPN: STP26N65DM2

EUR 3.26

1

DIGITAL MARKETING

Marque

Genre

Marchand

Prix (EUR)

STMicroelectronics Modulo MOSFET, canale N, 0,115 Ω, 25 A, TO-220FP

STMicroelectronics Modulo MOSFET, canale N, 0,115 Ω, 25 A, TO-220FP

STMicroelectronics Modulo MOSFET, canale N, 0,115 Ω, 25 A, D²PAK

STMicroelectronics Raddrizzatore controllato silicio SCR, TO-247, 3 Pin, 25, 1200V

STMicroelectronics MOSFET canal N,, DPAK (TO-252) 80 A 25 V, 3 broches

STMicroelectronics MOSFET, canale N, 130 mΩ, 25 A, D2PAK (TO-263), Montaggio superficiale

STMicroelectronics MOSFET canal N,, DPAK (TO-252) 80 A 25 V, 3 broches

STMicroelectronics MOSFET, canale N, 130 mΩ, 25 A, D2PAK (TO-263), Montaggio superficiale

STMicroelectronics MOSFET, canale N, 130 mΩ, 25 A, D2PAK (TO-263), Montaggio superficiale

STMicroelectronics MOSFET canal N,, DPAK (TO-252) 80 A 25 V, 3 broches

STMicroelectronics Module MOSFET canal N,, DPKZ 25 A 600 V, 3 broches

STMicroelectronics MOSFET canal N,, SOT223-2 5,5 A 25 V, 3 broches

STMicroelectronics MOSFET canal N,, D2PAK (TO-263) 25 A 650 V, 3 broches

STMicroelectronics MOSFET canal N,, D2PAK (TO-263) 25 A 650 V, 3 broches

STMicroelectronics MOSFET canal N,, D2PAK (TO-263) 25 A 650 V, 3 broches

STMicroelectronics Redresseur silicium contrôlé, TN4050-12WL, 25, 50mA, 1200V, A-247, 3 broches

STMicroelectronics Module MOSFET canal N,, TO-220FP 25 A 600 V, 3 broches

STMicroelectronics Module MOSFET canal N,, TO-220FP 25 A 600 V, 3 broches

STMicroelectronics Transistor MOSFET canal N,, PowerFLAT 25 A, 5 broches

STMicroelectronics Rectificador controlado de silicona SCR, 1200V, 25, 50mA, TO-247, 3-Pines

STMicroelectronics Transistor MOSFET, canale N, 110 mΩ, 25 A, PowerFLAT , Montaggio superficiale

STMicroelectronics Raddrizzatore controllato silicio SCR, TO-247, 3 Pin, 25, 1200V

STMicroelectronics Raddrizzatore controllato silicio SCR, TO-247, 3 Pin, 25, 1200V

STMicroelectronics MOSFET, canale N, 35 mΩ, 25 A, TO-220FP, Su foro

STMicroelectronics Transistor MOSFET canal N,, A-220 25 A, 3 broches

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