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STMicroelectronics MOSFET, canale N, 0,23 Ω, 13 A, DPAK

STMicroelectronics MOSFET, canale N, 0,23 Ω, 13 A, DPAK, MPN: STD18N60M6

EUR 1.83

1

STMicroelectronics Diode de protection ESD Unidirectionnel WLCSP, 13 broches

STMicroelectronics Diode de protection ESD Unidirectionnel WLCSP, 13 broches, MPN: OCVPB21-13F6

EUR 1.81

1

STMicroelectronics Diodo de protección ESD Unidireccional, OCVPB21-13F6, WLCSP, 13-Pines

STMicroelectronics Diodo de protección ESD Unidireccional, WLCSP, 13-Pines, MPN: OCVPB21-13F6

EUR 1.81

1

STMicroelectronics MOSFET canal N,, DPAK 13 A 600 V, 3 broches

STMicroelectronics MOSFET canal N,, DPAK 13 A 600 V, 3 broches, MPN: STD18N60M6

EUR 1.83

1

STMicroelectronics MOSFET, canale N, 0,23 Ω, 13 A, DPAK

STMicroelectronics MOSFET, canale N, 0,23 Ω, 13 A, DPAK, Tensione massima drain source: 600 V, Tensione di soglia gate massima: 4.75V, Serie: M6, MPN: STD18N60M6

EUR 1.33

1

STMicroelectronics MOSFET, canale N, 0,23 Ω, 13 A, DPAK

STMicroelectronics MOSFET, canale N, 0,23 Ω, 13 A, DPAK, Tensione massima drain source: 600 V, Tensione di soglia gate massima: 4.75V, Serie: M6, MPN: STD18N60M6

EUR 2.45

1

STMicroelectronics Diode de protection ESD Unidirectionnel WLCSP, 13 broches

STMicroelectronics Diode de protection ESD Unidirectionnel WLCSP, 13 broches, Configuration de diode: Ensemble complexe, Type de montage: CMS, Nombre d'éléments par circuit: 2, MPN: OCVPB21-13F6

EUR 0.82

1

STMicroelectronics Diode de protection ESD Unidirectionnel WLCSP, 13 broches

STMicroelectronics Diode de protection ESD Unidirectionnel WLCSP, 13 broches, Configuration de diode: Ensemble complexe, Type de montage: CMS, Nombre d'éléments par circuit: 2, MPN: OCVPB21-13F6

EUR 1.85

1

STMicroelectronics MOSFET, STD18N60M6, N-Canal-Canal, 13 A, 600 V, 3-Pin, DPAK M6 Si

STMicroelectronics MOSFET, N-Canal-Canal, 13 A, 600 V, 3-Pin, DPAK M6 Si, MPN: STD18N60M6

EUR 1.83

1

STMicroelectronics Diodo de protección ESD Unidireccional, OCVPB21-13F6, WLCSP, 13-Pines

STMicroelectronics Diodo de protección ESD Unidireccional, WLCSP, 13-Pines, Configuración de diodo: Matriz compleja, Tipo de Montaje: Montaje superficial, Número de Elementos por Chip: 2, MPN: OCVPB21-13F6

EUR 1.85

1

STMicroelectronics Diodo de protección ESD Unidireccional, OCVPB21-13F6, WLCSP, 13-Pines

STMicroelectronics Diodo de protección ESD Unidireccional, WLCSP, 13-Pines, Configuración de diodo: Matriz compleja, Tipo de Montaje: Montaje superficial, Número de Elementos por Chip: 2, MPN: OCVPB21-13F6

EUR 0.82

1

STMicroelectronics MOSFET canal N,, DPAK 13 A 600 V, 3 broches

STMicroelectronics MOSFET canal N,, DPAK 13 A 600 V, 3 broches, Résistance Drain Source maximum: 0,23 Ω, Tension de seuil maximale de la grille: 4.75V, Série: M6, MPN: STD18N60M6

EUR 1.33

1

STMicroelectronics MOSFET canal N,, DPAK 13 A 600 V, 3 broches

STMicroelectronics MOSFET canal N,, DPAK 13 A 600 V, 3 broches, Résistance Drain Source maximum: 0,23 Ω, Tension de seuil maximale de la grille: 4.75V, Série: M6, MPN: STD18N60M6

EUR 2.45

1

STMicroelectronics Driver de LED SSO, 13 V, 10 broches

STMicroelectronics Driver de LED SSO, 13 V, 10 broches, Courant d'alimentation maximum: 3,15 mA, Type de montage: CMS, Dimensions: 5 x 4 x 1.5mm, Température d'utilisation maximum: +125 °C, Température de fonctionnement minimum: -40 °C, Tension de sortie: 14,5 V, Largeur: 4mm, MPN: HVLED001A

EUR 0.52

1

STMicroelectronics Driver LED HVLED001ATR, alimentazione 13 V, SSO 10 Pin

STMicroelectronics Driver LED HVLED001ATR, alimentazione 13 V, SSO 10 Pin, Corrente di alimentazione massima: 3,15 mA, Tipo di montaggio: Montaggio superficiale, Dimensioni: 5 x 4 x 1.5mm, Massima temperatura operativa: +125 °C, Minima temperatura operativa: -40 °C, Tensione di uscita: 14,5 V, Larghezza: 4mm

EUR 0.52

1

STMicroelectronics Controlador LED, HVLED001ATR, encapsulado SSO, 10 pines, 13 V

STMicroelectronics Controlador LEDTR, encapsulado SSO, 10 pines, 13 V, Corriente de Alimentación Máxima: 3,15 mA, Tipo de Montaje: Montaje superficial, Dimensiones: 5 x 4 x 1.5mm, Temperatura Máxima de Funcionamiento: +125 °C, Temperatura de Funcionamiento Mínima: -40 °C, Tensión de Salida: 14,5 V, Ancho: 4mm, MPN: HVLED001A

EUR 0.52

1

STMicroelectronics MOSFET, STD18N60M6, N-Canal-Canal, 13 A, 600 V, 3-Pin, DPAK M6 Si

STMicroelectronics MOSFET, N-Canal-Canal, 13 A, 600 V, 3-Pin, DPAK M6 Si, Resistencia Máxima Drenador-Fuente: 0,23 Ω, Tensión de umbral de puerta máxima: 4.75V, MPN: STD18N60M6

EUR 2.45

1

STMicroelectronics MOSFET, STD18N60M6, N-Canal-Canal, 13 A, 600 V, 3-Pin, DPAK M6 Si

STMicroelectronics MOSFET, N-Canal-Canal, 13 A, 600 V, 3-Pin, DPAK M6 Si, Resistencia Máxima Drenador-Fuente: 0,23 Ω, Tensión de umbral de puerta máxima: 4.75V, MPN: STD18N60M6

EUR 1.33

1

STMicroelectronics Transistor MOSFET canal N,, D2PAK 13 A, 3 broches

STMicroelectronics Transistor MOSFET canal N,, D2PAK 13 A, 3 broches, Type de montage: CMS, Résistance Drain Source maximum: 280 mΩ, Mode de canal: Enrichissement, Tension de seuil maximale de la grille: 4.75V, Tension de seuil minimale de la grille: 3.25V, Dissipation de puissance maximum: 110 W, Configuration du transistor: Simple, Tension Grille Source maximum: ±25 V, Longueur: 10.4mm, Température d'utilisation maximum: +150 °C, MPN: STB18N60M6

EUR 1.39

1

STMicroelectronics Transistor MOSFET canal N,, D2PAK 13 A, 3 broches

STMicroelectronics Transistor MOSFET canal N,, D2PAK 13 A, 3 broches, Type de montage: CMS, Résistance Drain Source maximum: 280 mΩ, Mode de canal: Enrichissement, Tension de seuil maximale de la grille: 4.75V, Tension de seuil minimale de la grille: 3.25V, Dissipation de puissance maximum: 110 W, Configuration du transistor: Simple, Tension Grille Source maximum: ±25 V, Longueur: 10.4mm, Température d'utilisation maximum: +150 °C, MPN: STB18N60M6

EUR 2.83

3

STMicroelectronics Transistor MOSFET canal N,, D2PAK 13 A, 3 broches

STMicroelectronics Transistor MOSFET canal N,, D2PAK 13 A, 3 broches, Type de montage: CMS, Résistance Drain Source maximum: 280 m Ω, Mode de canal: Enrichissement, Tension de seuil maximale de la grille: 4.75V, Tension de seuil minimale de la grille: 3.25V, Dissipation de puissance maximum: 110 W, Configuration du transistor: Simple, Tension Grille Source maximum: ±25 V, Tension directe de la diode: 1.6V, Hauteur: 4.37mm, MPN: STB18N60M6

EUR 2.66

3

STMicroelectronics Transistor MOSFET, canale N, 280 mΩ, 13 A, D2PAK, Montaggio superficiale

STMicroelectronics Transistor MOSFET, canale N, 280 mΩ, 13 A, D2PAK, Montaggio superficiale, Modalità del canale: Enhancement, Tensione di soglia gate massima: 4.75V, Tensione di soglia gate minima: 3.25V, Dissipazione di potenza massima: 110 W, Configurazione transistor: Singolo, Tensione massima gate source: ±25 V, Lunghezza: 10.4mm, Massima temperatura operativa: +150 °C, MPN: STB18N60M6

EUR 1.39

1

STMicroelectronics MOSFET, canale N, 550 mΩ, 13 A, TO-220FP, Su foro

STMicroelectronics MOSFET, canale N, 550 mΩ, 13 A, TO-220FP, Su foro, Tensione massima drain source: 600 V, Modalità del canale: Enhancement, Tensione di soglia gate massima: 4.5V, Tensione di soglia gate minima: 3V, Dissipazione di potenza massima: 35 W, Configurazione transistor: Singolo, Tensione massima gate source: -30 V, +30 V, Altezza: 16.4mm, MPN: STP13NK60ZFP

EUR 4.06

1

STMicroelectronics MOSFET, canale N, 280 mΩ, 13 A, TO-220, Su foro

STMicroelectronics MOSFET, canale N, 280 mΩ, 13 A, TO-220, Su foro, Tensione massima drain source: 650 V, Modalità del canale: Enhancement, Tensione di soglia gate massima: 4V, Tensione di soglia gate minima: 2V, Dissipazione di potenza massima: 110 W, Configurazione transistor: Singolo, Tensione massima gate source: -25 V, +25 V, Altezza: 15.75mm, MPN: STP18N60M2

EUR 1.88

1

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Prix (EUR)

STMicroelectronics MOSFET, canale N, 0,23 Ω, 13 A, DPAK

STMicroelectronics Diode de protection ESD Unidirectionnel WLCSP, 13 broches

STMicroelectronics Diodo de protección ESD Unidireccional, OCVPB21-13F6, WLCSP, 13-Pines

STMicroelectronics MOSFET canal N,, DPAK 13 A 600 V, 3 broches

STMicroelectronics MOSFET, canale N, 0,23 Ω, 13 A, DPAK

STMicroelectronics MOSFET, canale N, 0,23 Ω, 13 A, DPAK

STMicroelectronics Diode de protection ESD Unidirectionnel WLCSP, 13 broches

STMicroelectronics Diode de protection ESD Unidirectionnel WLCSP, 13 broches

STMicroelectronics MOSFET, STD18N60M6, N-Canal-Canal, 13 A, 600 V, 3-Pin, DPAK M6 Si

STMicroelectronics Diodo de protección ESD Unidireccional, OCVPB21-13F6, WLCSP, 13-Pines

STMicroelectronics Diodo de protección ESD Unidireccional, OCVPB21-13F6, WLCSP, 13-Pines

STMicroelectronics MOSFET canal N,, DPAK 13 A 600 V, 3 broches

STMicroelectronics MOSFET canal N,, DPAK 13 A 600 V, 3 broches

STMicroelectronics Driver de LED SSO, 13 V, 10 broches

STMicroelectronics Driver LED HVLED001ATR, alimentazione 13 V, SSO 10 Pin

STMicroelectronics Controlador LED, HVLED001ATR, encapsulado SSO, 10 pines, 13 V

STMicroelectronics MOSFET, STD18N60M6, N-Canal-Canal, 13 A, 600 V, 3-Pin, DPAK M6 Si

STMicroelectronics MOSFET, STD18N60M6, N-Canal-Canal, 13 A, 600 V, 3-Pin, DPAK M6 Si

STMicroelectronics Transistor MOSFET canal N,, D2PAK 13 A, 3 broches

STMicroelectronics Transistor MOSFET canal N,, D2PAK 13 A, 3 broches

STMicroelectronics Transistor MOSFET canal N,, D2PAK 13 A, 3 broches

STMicroelectronics Transistor MOSFET, canale N, 280 mΩ, 13 A, D2PAK, Montaggio superficiale

STMicroelectronics MOSFET, canale N, 550 mΩ, 13 A, TO-220FP, Su foro

STMicroelectronics MOSFET, canale N, 280 mΩ, 13 A, TO-220, Su foro

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